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Samsung's famed lead in component manufacturing is being extended
today with the announcement of a DDR4 DRAM stick that can perform read
and write operations using up to 40 percent less power than the old/
current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while
Pseudo Open Drain technology assists in minimizing the battery impact.
Over time, Samsung projects the new DRAM modules will hit 4Gbps
speeds. It's working away with server makers right now in order to
achieve JEDEC certification, but the target market will clearly be
laptops and other mobile devices, where energy-frugal memory like this
would best be appreciated. Check out Samsung's PR after the break.
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